(China (Mainland))
Product Summary
The FQA28N50 is a N-Channel enhancement mode power field effect transistor. It is produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Parametrics
Absolute maximum ratings: (1)Drain-Source Voltage: 500 V ; (2)Drain Current: Continuous (TC = 25℃): 28.4 A, Continuous (TC = 100℃): 18 A ; (3)Drain Current - Pulsed: 113.6 A ; (4)Gate-Source Voltage: ± 30 V ; (5)Single Pulsed Avalanche Energy: 1300 mJ ; (6)Avalanche Current: 28.4 A ; (7)Repetitive Avalanche Energy: 31 mJ ; (8)Peak Diode Recovery dv/dt: 4.5 V/ns ; (9)Power Dissipation (TC = 25℃): 310 W, Derate above 25℃: 2.5 W/℃ ; (10)Operating and Storage Temperature Range: -55 to+150 ℃ ; (11)Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds: 300 ℃.
Features
Features: (1)28.4A, 500V, RDS(on) = 0.16Ω @VGS = 10 V; (2)Low gate charge ( typical 110 nC); (3)Low Crss ( typical 60 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 FQA28N50 |
Fairchild Semiconductor |
MOSFET 500V N-Channel QFET |
Data Sheet |
Negotiable |
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FQA28N50_F109 |
Fairchild Semiconductor |
MOSFET 500V QFET |
Data Sheet |
Negotiable |
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FQA28N50F |
Fairchild Semiconductor |
MOSFET 500V N-Channel FRFET |
Data Sheet |
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